Bright Led Electronics Co., Ltd

Taiwan Manufacturers, Exporters.

Products

940nm Infrared Emitting Diode

940nm-infrared-emitting-diode

  • Model No: BIR-BM13J4G-1
  • Factory Location: Taiwan
  • Sample Request: Yes
  • Target Markets: Worldwide

Detail Information

Description :

������ Features:
1. High radiant power and high radiant intensity.
2. Standard T-1 3/4(5mm)package.
3. Peak wavelength λp=940nm.
4. Good spectral matching to si-photodetector.
5. Radiant angle: 25°
6. Lens Appearance: Water Clear.
7. This product doesn't contain restriction
substance, comply RoHS standard
������ Applications:
1. Remote Control.
2. Automatic Control System.

Specification :

Absolute Maximum Ratings(Ta=25℃)
Parameter Symbol Rating Unit
Power Dissipation Pd 100 mW
Continuous Forward Current IF 100 mA
Peak Forward Current
*1
IFP 1.0 A
Reverse Voltage VR 5 V
Operating Temperature Topr -40℃~85℃ -
Storage Temperature Tstg -45℃~100℃ -
Soldering Temperature Tsol 260℃(for 5 seconds) -

Optical- Electrical Characteristics (@TA=25℃)
Typical Optical-Electrical Characteristic Curves
Parameter Symbol Test Conditions Min TYP Max Unit
Radiant Intensity Ie IF=50mA 11.78 45.31 - mW/sr
Forward Voltage VF IF=50mA - 1.25 1.5 V
Reverse Current IR VR=5V - - 100 μA
Peak Wavelength λp IF=20mA - 940 - nm
Spectral Line Half- Width Δλ IF=20mA - 50 - nm
Viewing Angle 2θ1/2 IF=20mA - 25 - deg

 

Sample Information

Total Available Quantity :
Unlimit
Per Delivery Quantity :
10 pcs
Sample Fees :
Free
Freight Fees :
Varied
Shipment :
Express
Delivery Time :
10 day(s)

Bright Led Electronics Co., Ltd

  • China